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APTGL60DDA120T3G
Dual Boost chopper Trench + Field Stop IGBT4 Power module
13 14
VCES = 1200V IC = 60A @ Tc = 80C
Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction
CR1
CR2
22 23 Q1 26 27
7 8 Q2 4 3
29 15
30
31 R1
32 16
Features * Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current - Low switching losses - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated - Symmetrical design * Kelvin emitter for easy drive * Very low stray inductance * High level of integration * Internal thermistor for temperature monitoring Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * Easy paralleling due to positive TC of VCEsat * Each leg can be easily paralleled to achieve a single boost of twice the current capability * RoHS compliant
28 27 26 25 29 30
23 22
20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ...
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 150C Max ratings 1200 80 60 100 20 280 100A @ 1100V Unit V A V W
April, 2009 1-5 APTGL60DDA120T3G - Rev 0
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGL60DDA120T3G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25C VGE = 15V IC = 50A Tj = 150C VGE = VCE , IC = 1.6mA VGE = 20V, VCE = 0V Min Typ 1.85 2.25 5.8 Max 250 2.25 6.5 400 Unit A V V nA
5.0
Dynamic Characteristics
Symbol Characteristic Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE= 15V ; VCE=600V IC=50A Inductive Switching (25C) VGE = 15V VCE = 600V IC = 50A RG = 8.2 Inductive Switching (150C) VGE = 15V VCE = 600V IC = 50A RG = 8.2 TJ = 25C VGE = 15V VCE = 600V TJ = 150C IC = 50A TJ = 25C RG = 8.2 TJ = 150C VGE 15V ; VBus = 900V tp 10s ; Tj = 150C Min Typ 2770 205 160 0.38 130 20 300 45 150 35 350 80 3.8 5.5 2.5 4.5 200 ns Max Unit pF C
ns
mJ mJ A
Chopper diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage IF = 60A IF = 120A IF = 60A IF = 60A VR = 800V di/dt =200A/s Test Conditions VR=1200V Tj = 25C Tj = 125C Tc = 80C Min 1200 Typ Max 100 500 60 2.5 3 1.8 265 350 560 2890 3 V Unit V A A
April, 2009 2-5 APTGL60DDA120T3G - Rev 0
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Reverse Recovery Time Reverse Recovery Charge
ns nC
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APTGL60DDA120T3G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.53 0.9 175 125 100 4.7 110 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To heatsink
M4
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol R25 R25/R25 B25/85 B/B Characteristic Resistance @ 25C T25 = 298.15 K TC=100C
RT = R25 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25
T: Thermistor temperature
Min
Typ 50 5 3952 4
Max
Unit k % K %
SP3 Package outline (dimensions in mm)
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
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3-5
APTGL60DDA120T3G - Rev 0
1
12
April, 2009
17
28
APTGL60DDA120T3G
Typical Performance Curve
100 80 IC (A) 60 40 20 0 0 1 2 VCE (V) 3 4 Output Characteristics (VGE=15V) Output Characteristics 100 TJ = 150C
TJ=25C TJ=150C
80 60 IC (A) 40 20 0 0 1
VGE=19V VGE=15V
VGE=9V
2 VCE (V)
3
4
100 80 60 40 20 0 5 6
Transfert Characteristics
TJ=25C
20 16 12 E (mJ) 8
Energy losses vs Collector Current
VCE = 600V VGE = 15V RG = 8.2 TJ = 150C
Eon
IC (A)
TJ=150C
Eoff
4 0
7
8
9
10
11
12
13
0
20
40
60 IC (A)
80
100
VGE (V) Switching Energy Losses vs Gate Resistance 12 10
Eon
Reverse Bias Safe Operating Area 120 100
E (mJ)
IC (A)
8 6 4 2 0
VCE = 600V VGE =15V IC = 50A TJ = 150C
Eoff
80 60 40 20 0
VGE=15V TJ=150C RG=8.2
10 20 30 Gate Resistance (ohms)
40
0
300
600 900 VCE (V)
1200
1500
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 Thermal Impedance (C/W) 0.5 0.4 0.3 0.2 0.1
0.9 0.7 0.5 0.3 0.1 0.05
Single Pulse
0 0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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4-5
APTGL60DDA120T3G - Rev 0
April, 2009
IGBT
APTGL60DDA120T3G
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 125 100 75 50 25 0 10 20 30 40 50 60 IC (A) 70 80 90
ZVS ZCS
140 IF, Forward Current (A)
VCE=600V D=50% RG=8.2 TJ=150C Tc=75C
Forward Characteristic of diode
TJ=125C
120 100 80 60 40 20 0 0 0.5 1
TJ=25C
Hard switching
1.5
2
2.5
3
3.5
VF, Anode to Cathode Voltage (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 1 0.8 0.6 0.4 0.2 0.9 DIODE 0.7 0.5 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 Rectangular Pulse Duration in Seconds 1 10
0 0.00001
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5-5
APTGL60DDA120T3G - Rev 0
April, 2009

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